Good Quality Power Electronic Components 2500V MBN1200E25C Silicon N-channel IGBT Module
Specification 1pcs / boxUSD139.69 / 10pcs1.35kg / pcs1.65kg / boxLength: 39cm Width: 19.5cm Height: 5.5cm
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? High thermal fatigue durability. (delta Tc=70 , N>30,000cycles)
? Low noise due to ultra soft fast recovery diode.
? High speed, low loss IGBT module.
? Low driving power due to low input capacitance MOS gate.
? High reliability, high durability module.
? Isolated head sink (terminal to base)
Notes :(3) RG value is the test condition¡¯s value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Counter arm IGBT VGE=-15V
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* For improvement, specifications are subject to change without notice
* For actual application, please confirm this spec sheet is the newest revision